Analysis of a Drift-Diffusion-Schrödinger–Poisson model
✍ Scribed by Naoufel Ben Abdallah; Florian Méhats; Nicolas Vauchelet
- Book ID
- 104447596
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 78 KB
- Volume
- 335
- Category
- Article
- ISSN
- 1631-073X
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📜 SIMILAR VOLUMES
In this paper, we derive a coupled Schrödinger drift-diffusion self-consistent stationary model for quantum semiconductor device simulations. The device is decomposed into a quantum zone (where quantum effects are expected to be large) and a classical zone (where they are supposed negligible). The S
## Abstract A mathematical model for quantum transport in an interband resonant tunneling diode is studied. The wave function of electrons has two components and is a solution of a 2 × 2 matrix Schrödinger equation derived from the __k.p__ theory. The first component represents that part of electro