Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

✍ Scribed by Daniel, E.S.; Cartoixa, X.; Frensley, W.R.; Ting, D.Z.-Y.; McGill, T.C.

• Book ID: 111931794
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 150 KB
• Volume: 47
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.841240