β Scribed by P.J. Kervalishvili; G.S. Karumidze; Sh.Sh. Shavelashvili; G.I. Kalandadze; S.O. Shalamberidze
No coin nor oath required. For personal study only.
Expenmental results on the mvestlgatlon of sensltlve elements made of 'OB-ennched boron carbide films and designed for neutron detection are described The amorphous and crystallme films are deposited onto a heated sapphire substrate with a pulse-penodlc laser The samples are irradiated both by thermal and fast neutrons m a nuclear reactor A posslbkty exists of gammg integral flows up to 3 x lOI n/cm' The electnc conductlvlty of the samples 1s measured dunng the n=radlatlon Measurements of neutron fields of vanous nuclear plants with sensors made of germannun and slhcon doped by l"B have also been carned out The selection of the base matenal and the concentration of 'OB lmpunty allows the efficiency of neutron detection and measurement urlth the donmeter to be vaned These neutron doslmeters possess memory and can be used as wtnesses of unusual situations m vanous nuclear power plants
π SIMILAR VOLUMES
The use of a semiconductor pressure sensor based on AlGaAs thin films to measure shock-wave pressures in lithotripters is described. The selection of an optimal thickness of encapsulant on the face of the pressure-sensitive chip enables a satisfactory durability and dynamic accuracy of the sensors t
Silicon detectors with 235 U converter for neutron flux measurements over a wide energy range (from thermal up to epithemal neutrons) have been developed. The surface-barrier detectors with plastic converters were developed for fast neutron detection.