Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

✍ Scribed by D. Nirmal (editor), J. Ajayan (editor), Patrick Fay (editor)

• Publisher: CRC Press
• Year: 2021
• Tongue: English
• Leaves: 303
• Edition: 1
• Category: Library

✦ Synopsis

This book covers the fundamentals and significance of 2D materials, and related semiconductor transistor technologies for the next generation ultra-low power applications. It provides a comprehensive coverage of the advanced low power transistors such as NCFETs, FinFETs, TFETs and flexible transistors for future ultra-low power applications owing to their better subthreshold swing and scalability. It also deals with the use of field effect transistors for biosensing applications and covers the design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs and TFETs. TCAD simulation examples are provided at appropriate places. The book,

• Discusses latest updates in the field of ultra-low power semiconductor transistors.
• Provides both experimental and analytical solutions for TFETs and NCFETs.
• Presents the synthesis and fabrication of FinFETs.
• Gives out details of 2D Materials and 2D transistors.
• Explores the application of FETs for biosensing in healthcare field.

This book is aimed at researchers, professionals and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.

✦ Table of Contents

Cover
Half Title
Title
Copyright
Contents
Preface
Editors
Contributors
Chapter 1 An Introduction to Nanoscale CMOS Technology Transistors: A Future Perspective
Chapter 2 High-Performance Tunnel Field-Effect Transistors (TFETs) for Future Low Power Applications
Chapter 3 Ultra Low Power III-V Tunnel Field-Effect Transistors
Chapter 4 Performance Analysis of Carbon Nanotube and Graphene Tunnel Field-Effect Transistors
Chapter 5 Characterization of Silicon FinFETs under Nanoscale Dimensions
Chapter 6 Germanium or SiGe FinFETs for Enhanced Performance in Low Power Applications
Chapter 7 Switching Performance Analysis of III-V FinFETs
Chapter 8 Negative Capacitance Field-Effect Transistors to Address the Fundamental Limitations in Technology Scaling
Chapter 9 Recent Trends in Compact Modeling of Negative Capacitance Field-Effect Transistors
Chapter 10 Fundamentals of 2-D Materials
Chapter 11 Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field-Effect Transistor (FET) Devices for Low Power Applications
Index