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Power Electronics Semiconductor Devices

โœ Scribed by Robert Perret


Publisher
Wiley-ISTE
Year
2009
Tongue
English
Leaves
559
Category
Library

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โœฆ Synopsis


This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations.
Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.
Content:
Chapter 1 Power MOSFET Transistors (pages 1โ€“56): Pierre Aloisi
Chapter 2 Insulated Gate Bipolar Transistors (pages 57โ€“132): Pierre Aloisi
Chapter 3 Series and Parallel Connections of MOS and IGBT (pages 133โ€“183): Daniel Chatroux, Dominique Lafore and Jean?Luc Schanen
Chapter 4 Silicon Carbide Applications in Power Electronics (pages 185โ€“265): Marie?Laure Locatelli and Dominique Planson
Chapter 5 Capacitors for Power Electronics (pages 267โ€“315): Abderrahmane Beroual, Sophie Guillemet?Fritsch and Thierry Lebey
Chapter 6 Modeling Connections (pages 317โ€“401): Edith Clavel, Francois Costa, Arnaud Guena, Cyrille Gautier, James Roudet and Jean?Luc Schanen
Chapter 7 Commutation Cell (pages 403โ€“432): James Roudet and Jean?Luc Schanen
Chapter 8 Power Electronics and Thermal Management (pages 433โ€“496): Corinne Perret and Robert Perret
Chapter 9 Towards Integrated Power Electronics (pages 497โ€“545): Patrick Austin, Marie Breil and Jean?Louis Sanchez


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