𝔖 Bobbio Scriptorium
✦   LIBER   ✦

SEM and Raman studies of annealed nanocrystalline GaN and amorphous GaN:O

✍ Scribed by H.J. Trodahl; C.E.A. Grigorescu; A. Bittar; F. Budde; B.J. Ruck; S. Granville; G.V.M. Williams; O. Monnereau; R. Notonier

Book ID
116669050
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
150 KB
Volume
352
Category
Article
ISSN
0022-3093

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Raman study of Mg, Si, O, and N implante
Raman study of Mg, Si, O, and N implanted GaN
✍ Katsikini, M.; Papagelis, K.; Paloura, E. C.; Ves, S. πŸ“‚ Article πŸ“… 2003 πŸ› American Institute of Physics 🌐 English βš– 363 KB
Implantation and annealing studies of Tm
Implantation and annealing studies of Tm-implanted GaN
✍ K Lorenz; E Alves; U Wahl; T Monteiro; S Dalmasso; R.W Martin; K.P O’Donnell; R πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 106 KB

Thulium ions were implanted into metal organic chemical vapour deposition (MOCVD) grown GaN films with different fluences at implantation temperatures of 20, 400 and 500 β€’ C. Subsequent annealing of the samples was performed in a rapid thermal annealing apparatus. The lattice damage introduced by th