Implantation and annealing studies of Tm-implanted GaN

✍ Scribed by K Lorenz; E Alves; U Wahl; T Monteiro; S Dalmasso; R.W Martin; K.P O’Donnell; R Vianden

• Book ID: 104061896
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 106 KB
• Volume: 105
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2003.08.023

✦ Synopsis

Thulium ions were implanted into metal organic chemical vapour deposition (MOCVD) grown GaN films with different fluences at implantation temperatures of 20, 400 and 500 • C. Subsequent annealing of the samples was performed in a rapid thermal annealing apparatus. The lattice damage introduced by the implantation and the effect of post-implant annealing were investigated with the Rutherford backscattering (RBS)/channelling technique. We observe that implantation at 500 • C considerably reduces the induced lattice damage and increases the amorphisation threshold. The lattice-site location of the implanted ions was determined by performing detailed channelling measurements for the 0 0 0 1 and 1 0 1 1 crystal directions. The results show that Tm ions mainly occupy substitutional Ga-sites directly after implantation and after annealing. The optical properties of the ion-implanted GaN films have been studied by room temperature cathodoluminescence (CL) measurements. Well-defined emission due to intra-4f shell transitions of the Tm 3+ ions are observed in the blue spectral range at 477 nm and in the near infra-red (IR) at 804 nm.