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Study of Fe+ implanted GaN

✍ Scribed by E. Alves; C. Liu; J.C. Waerenborgh; M.F. da Silva; J.C. Soares


Book ID
114164526
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
170 KB
Volume
175-177
Category
Article
ISSN
0168-583X

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Thulium ions were implanted into metal organic chemical vapour deposition (MOCVD) grown GaN films with different fluences at implantation temperatures of 20, 400 and 500 β€’ C. Subsequent annealing of the samples was performed in a rapid thermal annealing apparatus. The lattice damage introduced by th