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Raman study of Mg, Si, O, and N implanted GaN

✍ Scribed by Katsikini, M.; Papagelis, K.; Paloura, E. C.; Ves, S.


Book ID
121257585
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
363 KB
Volume
94
Category
Article
ISSN
0021-8979

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As-grown highly resistive (>10 7 W cm) GaN samples were exposed to implantation of 24 Mg + ions with the energy of 120 keV and dose of 2 Γ‚ 10 14 cm --2 . Isochronal rapid thermal annealing (RTA) was carried out for the Mg-implanted samples at 850, 950 and 1050 C, respectively. Under z(x, x)z 0 backs