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Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy

✍ Scribed by M. Taskinen; M. Sopanen; H. Lipsanen; J. Tulkki; T. Tuomi; J. Ahopelto

Book ID
117217268
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
583 KB
Volume
376
Category
Article
ISSN
0039-6028

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A single nominally lattice matched GalnAs quantum well (QW)/quantum wire (QWR) structure was grown by metalorganic vapor phase epitaxy (MOVPE) in Vgrooved lnP substrates. Different SiO2 etch masks with opening widths from 2/tin down to 200 nm (for application as second order DFB grating) were define