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Self-assembled InAs island formation on GaAs (1 1 0) by metalorganic vapor phase epitaxy

โœ Scribed by A. Aierken; T. Hakkarainen; M. Sopanen; J. Riikonen; J. Sormunen; M. Mattila; H. Lipsanen


Book ID
108060372
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
545 KB
Volume
254
Category
Article
ISSN
0169-4332

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The formation of III-V InAs quantum dots (QDs) on group-IV Si 1-x Ge x /Si(0 0 1) was investigated by metalorganic vapor-phase epitaxy. Two types of QDs, round-shaped QDs and giant QDs elongated in the [1 1 0] or [1,-1,0] direction, were observed in a growth condition of low V/III ratios. An increas