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Self-organized growth of quantum dot-tunnel barrier systems

✍ Scribed by M. Dilger; K. Eberl; R.J. Haug; K. von Klitzing

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
487 KB
Volume
21
Category
Article
ISSN
0749-6036

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✦ Synopsis

Surface selective epitaxial growth on patterned substrates is used to fabricate quantum dottunnel barrier systems, which can be used as single-electron transistor devices. In the centre of a pre-patterned constriction a self-assembled GaAs quantum dot embedded in barrier material is formed during the molecular beam epitaxial growth of an Al 0.33 Ga 0.67 As/GaAs heterostructure. The quantum dot is connected via self-aligned tunnelling barriers to source and drain electrodes. In-plane-gate electrodes are also realized within the epitaxial growth process. The paper describes the fabrication process of the device and the characterization of the direct grown quantum dot-tunnel barrier system using scanning-electron microscopy, atomic-force microscopy and transport spectroscopy.

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