Evidence of multimodal patterns of self-organized quantum dots
โ Scribed by F. Chen; S.L. Feng; Q. Zhao; Z.M. Wang; X.Z. Yang; L.S. Wen
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 92 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
โฆ Synopsis
We have used Deep Level Transient Spectroscopy to investigate self-organized InAs/GaAs quantum dots. The existence of different dot families is confirmed by the deconvolution of the spectra in Gaussian components with full width at half maximum of 60-70 meV. The strain of quantum dots is responsible for the relaxation of large quantum dots leading to generation of dislocations.
๐ SIMILAR VOLUMES
Surface selective epitaxial growth on patterned substrates is used to fabricate quantum dottunnel barrier systems, which can be used as single-electron transistor devices. In the centre of a pre-patterned constriction a self-assembled GaAs quantum dot embedded in barrier material is formed during th
An array of elongated quantum dots (quantum dashes) can self polarize into an antiferroelectric state. In contrast to the conventional antiferroelectricity, this spontaneous polarization does not require any ionic displacements for its establishment. We present the main arguments and proofs of this