Self-consistent calculation of the hole autolocalization barrier in the CuO2plane
โ Scribed by A. K. Shelkan; V. V. Hizhnyakov; E. Sigmund
- Book ID
- 110119019
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 1999
- Tongue
- English
- Weight
- 59 KB
- Volume
- 41
- Category
- Article
- ISSN
- 1063-7834
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
With contributions from both three-dimensional (3D) electrons in heavily doped contacts and 2D electrons in the accumulation layer, a self-consistent calculation based on effective mass theory is presented for studying the anomalous behaviour of the quasi-bound levels in the accumulation layer and t
A new method for the self-consistent calculation of the density-of-states mass of holes in 2-D silicon structures is presented. As an illustration, the two-dimensional dispersion relation E(k x , ky) for the band edges of the holes is calculated for a silicon p-channel inversion layer using the Kohn