Self-consistent calculation of the density-of-states mass of holes in 2-D silicon structures

✍ Scribed by K.H. Teo; W. Allegretto; J.N. McMullin; H.G. Schmidt-Weinmar

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 402 KB
• Volume: 59
• Category: Article
• ISSN: 0010-4655
• DOI: 10.1016/0010-4655(90)90176-2

✦ Synopsis

A new method for the self-consistent calculation of the density-of-states mass of holes in 2-D silicon structures is presented. As an illustration, the two-dimensional dispersion relation E(k x , ky) for the band edges of the holes is calculated for a silicon p-channel inversion layer using the Kohn-Luttinger 6x6 matrix Hamiltonian and the Hartree approximation. We have used a method of finite boxes and employed a strategy of bisection for constructing the contours of the Fermi energy. Our method is efficient and accurate and can be applied to the study of doping superlattices where the distribution of the electric potential may vary with the external bias. The results of our computations are in good agreement with experimental results from silicon p-channel inversion layers, in particular for the density-of-states mass of the light and heavy holes.