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Self-consistent analysis of electric field effects on Si delta -doped GaAs

✍ Scribed by Cuesta, J A; Sanchez, A; Dominguez-Adame, F


Book ID
120184309
Publisher
Institute of Physics
Year
1995
Tongue
English
Weight
536 KB
Volume
10
Category
Article
ISSN
0268-1242

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The intersubband transitions in Si d-doped GaAs structures is theoretically investigated for different applied electric fields. For an uniform distribution the electronic structure has been calculated by solving the Schro Β¨dinger and Poisson equations selfconsistently. From our calculations, it is f