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The electric field effects on intersubband optical absorption of Si δ-doped GaAs layer

✍ Scribed by Emine Ozturk; Ismail Sokmen

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
155 KB
Volume
126
Category
Article
ISSN
0038-1098

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✦ Synopsis

The intersubband transitions in Si d-doped GaAs structures is theoretically investigated for different applied electric fields. For an uniform distribution the electronic structure has been calculated by solving the Schro ¨dinger and Poisson equations selfconsistently. From our calculations, it is found that the subband energies and intersubband optical absorption is quite sensitive to the applied electric field. This gives a new degree of freedom in various device applications based on the intersubband transitions of electrons.

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The effects of intense laser field and electric field on intersubband absorption in a double-graded quantum well
✍ E. Kasapoglu; I. Sökmen 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 291 KB

In this study, the intense laser-field dependence of intersubband absorption coefficient for 1-2 transition in GaAs/Ga 1Àx Al x As DGQW under the electric field is investigated. The obtained results show that by changing the laser intensity together with the electric field and the well parameters (w