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Self-compensation in Mg doped p-type GaN grown by MOCVD

✍ Scribed by H Obloh; K.H Bachem; U Kaufmann; M Kunzer; M Maier; A Ramakrishnan; P Schlotter

Book ID
108342819
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
82 KB
Volume
195
Category
Article
ISSN
0022-0248

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Photoluminescence of Mg-doped m-plane Ga
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✍ Monemar, Bo ;Paskov, Plamen ;Pozina, Galia ;Hemmingsson, Carl ;Bergman, Peder ;L πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 355 KB

## Abstract Photoluminescence (PL) properties are reported for a set of __m__‐plane GaN films with Mg doping varied from mid 10^18^ cm^βˆ’3^ to above 10^20^ cm^βˆ’3^. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound excito