✦ LIBER ✦

Self-assembly patterning of epitaxial CoSi2 nano-structures

✍ Scribed by Q.T Zhao; P Kluth; S Winnerl; S Lenk; S Mantl

Book ID: 104305761
Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 413 KB
Volume: 64
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(02)00819-5

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✦ Synopsis

A self-assembly nanopatterning method for epitaxial-CoSi layers has been developed and investigated. It is 2 based on anisotropic diffusion of Co / Si atoms in a stress field during rapid thermal oxidation. The stress field is generated by a patterned trench mask consisting of 20 nm SiO and 300 nm Si N . Single-crystalline CoSi 2 3 4 2 layers with a thickness of 20 nm grown by molecular beam allotaxy (MBA) on Si(100) substrates were patterned using this technique. Uniform gaps or uniform CoSi wires with a feature size of 80 nm have been 2 fabricated by using different stress fields which are created by different trench widths.

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