Self-assembly patterning of epitaxial CoSi2 wires

✍ Scribed by P Kluth; Q.T Zhao; S Winnerl; S Mantl

• Book ID: 104305610
• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 895 KB
• Volume: 60
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(01)00600-1

✦ Synopsis

We have investigated a self-assembly process for patterning epitaxial CoSi nanowires using local oxidation 2 of silicides (LOCOSI). This involves single-crystalline, epitaxial CoSi grown on Si(100) by molecular beam 2 allotaxy (MBA). A mask consisting of 20 nm SiO and 400 nm Si N , deposited by plasma enhanced chemical 2 34

vapor deposition (PECVD) and patterned with conventional optical lithography, induces a stress field near its edges into the underlying CoSi / Si heterostructure. A rapid thermal oxidation step leads to the separation of the 2 CoSi layer in this region due to the concomitant anisotropic diffusion of the cobalt atoms in the stress field.

2

Etching back the oxide underneath the nitride shifts the stress field underneath the mask leading to the formation of homogeneous silicide wires along the mask during a second oxidation step. Using this new approach, continuous wires with a minimum width of approximately 80 nm were observed.