Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case
✍ Scribed by S. Sanguinetti; G. Chiantoni; A. Miotto; E. Grilli; M. Guzzi; M. Henini; A. Polimeni; A. Patanè; L. Eaves; P.C. Main
- Book ID
- 108480961
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 457 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0968-4328
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In this work, we present substrate orientation effects on optical properties in vertically stacked In 0.5 Ga 0.5 As layers grown by molecular beam epitaxy on (311)A/B and reference (100) GaAs substrates. Samples were grown for different GaAs spacer thicknesses. The spacer thickness variation shows t
Photocurrent spectroscopy is used to investigate the quantum-confined Stark shift, QCSS, of In 0.5 Ga 0.5 As/GaAs self-assembled quantum dots (QDs) grown on (100) and (311)B planes. An asymmetric dependence of the QCSS with respect to the direction of the electric field is observed in both cases. We