Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
β Scribed by N. W. Strom; Zh. M. Wang; J. H. Lee; Z. Y. AbuWaar; Yu. I. Mazur; G. J. Salamo
- Book ID
- 107470176
- Publisher
- Springer-Verlag
- Year
- 2007
- Tongue
- English
- Weight
- 358 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1931-7573
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π SIMILAR VOLUMES
We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum
In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and 7), and on reference (100) substrates. Investigation of orientation and polarity effects by means of photoluminescence (PL) are also present
The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with Ga