Transport signatures for correlated disorder in self-assembled InAs quantum dots on GaAs
✍ Scribed by T. Heinzel; R. Jäggi; M. von Waldkirch; E. Ribeiro; K. Ensslin; S.E. Ulloa; G. Medeiros-Ribeiro; P.M. Petroff
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 336 KB
- Volume
- 12
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Molecular beam epitaxy has been used for growing self-assembled InAs quantum dots. A continuous variation of the InAs average coverage across the sample has been obtained by properly aligning the (001) GaAs substrate with respect to the molecular beam. Excitation of a large number of dots (laser spo
We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum