Self-assembled ErAs islands in GaAs for THz applications

✍ Scribed by Christoph Kadow; Andrew W Jackson; Arthur C Gossard; John E Bowers; Shuji Matsuura; Geoffrey A Blake

• Book ID: 104429612
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 151 KB
• Volume: 7
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(99)00314-8

✦ Synopsis

This paper concerns self-assembled ErAs islands in GaAs grown by molecular beam epitaxy. The nucleation of ErAs on GaAs occurs in an island growth mode leading to spontaneous formation of nanometer-sized islands. Pump-probe measurements indicate that the ErAs islands capture photogenerated carriers on a subpicosecond time scale. This together with the high resitivity of the material allows us to use it as a fast photoconductor. The performance of photomixer devices made from this material is discussed.