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Selenium implantation in epitaxial gallium arsenide layers

✍ Scribed by Taroh Inada; Kazunao Tokunaga; Shin-ichi Taka; Yutaka Yuge; Hideaki Kohzu

Publisher: Elsevier Science
Year: 1981
Weight: 651 KB
Volume: 182-183
Category: Article
ISSN: 0029-554X
DOI: 10.1016/0029-554x(81)90800-4

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## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e