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Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion

โœ Scribed by Boon Siew Ooi; McIlvaney, K.; Street, M.W.; Helmy, A.S.; Ayling, S.G.; Bryce, A.C.; Marsh, J.H.; Roberts, J.S.


Book ID
117868753
Publisher
IEEE
Year
1997
Tongue
English
Weight
204 KB
Volume
33
Category
Article
ISSN
0018-9197

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Time-resolved photoluminescence measurements in ฮด-doped GaAs/AlGaAs on the quantum well structures are performed to study effects of ionized impurities relaxation process of photoexcited carriers. It is theoretically shown that a thin quantum well with a ฮด-doping layer inserted in the barrier layer