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Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures

✍ Scribed by Shu Yuan; Jagadish, C.; Yong Kim; Yong Chang; Hark Hoe Tan; Cohen, R.M.; Petravic, M.; Lap Van Dao; Gal, M.; Chan, M.C.Y.; Li, E.H.; Jeong-Seok O; Zory, P.S., Jr.


Book ID
117866190
Publisher
IEEE
Year
1998
Tongue
English
Weight
164 KB
Volume
4
Category
Article
ISSN
1077-260X

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Scattering-induced ndr in AlGaAs/GaAs qu
✍ Mustafa Al-Mudares; Brian K. Ridley πŸ“‚ Article πŸ“… 1985 πŸ› Elsevier Science βš– 203 KB

Hot-electron transport in a AIGaAs/GaAs quantum well system is simulated using Monte Carlo techniques and the dependence on doping density in the AIGaAs is explored, taking into account electronelectron scattering. The appearance of a scattering-induced ndr over a range of doping densities, previous