Selective growth of InAs quantum dots on SiO2-masked GaAs
β Scribed by Arciprete, F.
- Book ID
- 119983228
- Publisher
- The International Society for Optical Engineering
- Year
- 2009
- Tongue
- English
- Weight
- 525 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1934-2608
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We report a comparative study on selective epitaxy of nanostructures with different geometrical shapes. GaAs pyramids were grown by molecular beam epitaxy into circular holes, L-shaped holes, and cross-shaped holes, patterned using nanoimprint lithography. These GaAs nanostructures were used for gui
A site-selective growth of self-organized InAs quantum dots (QDs) employing a combination of in-situ focused ion beam (FIB) implantation and self-organized molecular beam epitaxy (MBE) growth has been successfully demonstrated. First, a buffer layer of GaAs was grown by MBE before a square lattice o