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Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy

✍ Scribed by Tang, H.; Bardwell, J. A.; Webb, J. B.; Moisa, S.; Fraser, J.; Rolfe, S.

Book ID: 121816510
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 497 KB
Volume: 79
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1413956

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