## Abstract The temperature and magnetic field dependences of the conductivity associated with hopping transport of holes over 2D arrays of Ge/Si quantum dots with various filling factors are studied experimentally. A transition from the EfrosβShklovskii law for the temperature dependence of hoppin
β¦ LIBER β¦
Selective growth of GaAs quantum dots and vertical quantum wires in two-dimensional V-grooves
β Scribed by S. Ishida; Y. Arakawa
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 200 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1386-9477
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