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Hopping photoconductivity and its long-time relaxation in two-dimensional array of Ge/Si quantum dots

✍ Scribed by N. P. Stepina; A. I. Yakimov; A.V. Nenashev; A. V. Dvurechenskii; A. V. Peregoedov; A. I. Nikiforov


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
481 KB
Volume
2
Category
Article
ISSN
1862-6351

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## Abstract The temperature and magnetic field dependences of the conductivity associated with hopping transport of holes over 2D arrays of Ge/Si quantum dots with various filling factors are studied experimentally. A transition from the Efros‐Shklovskii law for the temperature dependence of hoppin