Selective etching and dissolution of BaF2crystals
β Scribed by A. E. Smirnov; A. A. Urusovskaya
- Publisher
- Springer
- Year
- 1980
- Tongue
- English
- Weight
- 638 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0022-2461
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π SIMILAR VOLUMES
The effect of temperature and concentration of HC1 aqeous solutions on the etching behaviour on the face (1 11) of CaF, single crystals is investigated. It has been observed that the shape and the evolution of etch pits and the values of dissolution rate depend on the etching conditions. From the pl
By fitting theoretically calculated to experimentally found lg UT f 1/T dependencies ( u conductivity) there were obtained : the free formation enthalpy of anti-Frenkel defects gAB = 1.81 eV -7.85 kT, and the mobilities v, and V I of Fion vacancies and interstzials: v,T = 240 exp (-0.59 eV/kT) cm2 K