Selective ablation of thin SiO2layers on silicon substrates by
β Scribed by T. Rublack; S. Hartnauer; P. Kappe; C. Swiatkowski; G. Seifert
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 708 KB
- Volume
- 103
- Category
- Article
- ISSN
- 1432-0630
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A 2000 layer of Tb followed by a 200 layer of Si was deposited onto an substrate. The samples were A A SiO 2 annealed from 480 ΓC for 4 min to 800 ΓC for 120 min in a high vacuum (p O 2 Γ 10-7 Torr). It was inferred from Auger depth proΓles and peak shapes that the reaction between Tb and starts by
Due to its outstanding electrical and mechanical properties, silicon carbide (SiC) is considered a leading semiconducting material for high temperature sensors. Since the piezoresistive effect in SiC is highly anisotropic and exhibits a dependence on the crystal orientation, the role of the substra