A 2000 layer of Tb followed by a 200 layer of Si was deposited onto an substrate. The samples were A A SiO 2 annealed from 480 รC for 4 min to 800 รC for 120 min in a high vacuum (p O 2 ร 10-7 Torr). It was inferred from Auger depth proรles and peak shapes that the reaction between Tb and starts by the dissociation of at SiO 2 SiO 2 the interface. The released oxygen di โ uses into the deposited Tb, forming a Tb-O solid solution. Terbium Tb/SiO 2 silicide initially forms at the interface. After annealing for 25 min at 480 รC, terbium oxide started to Tb/SiO 2 grow next to the substrate. After annealing for 80 min at 480 รC, the oxide/silicide (with oxygen)/oxide layers SiO 2 were well separated on the substrate. Annealing at 600 รC for 16 min and at 800 รC for 120 min resulted in an SiO 2 additional layer that formed next to the which consists of Tb, Si and oxygen. We assume that this layer is SiO 2
, the beginning of the formation of another silicide layer with embedded oxygen in the layer. The sample eventually consists of (with oxygen)/metal oxide/silicide (with oxygen)/metal oxide. The metal oxides SiO 2 (substrate)/silicide contain an Si concentration of AE4 at.%. The depth proรle of the sample annealed at 800 รC for 120 min does not di โ er signiรcantly from the depth proรle of the sample annealed at 600 รC for 16 min, except that the proรles show that the silicide layer of the 800 รC annealed sample is more oxidized.