The local atomic structure and lattice dynamics are studied for strain-compensated \(\mathrm{Si}_{1-\mathrm{x}-\mathrm{y}} \mathrm{Ge}_{\mathrm{x}} \mathrm{C}_{\mathrm{y}}\) layers grown by molecular beam epitaxy on \(\mathrm{Si}\) (001) substrates. The layers were characterized by transmission elec
✦ LIBER ✦
Segregation of boron to polycrystalline and single-crystal Si1−x−yGexCy and Si1−yCy layers
✍ Scribed by E.J Stewart; J.C Sturm
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 107 KB
- Volume
- 224
- Category
- Article
- ISSN
- 0169-4332
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## Abstract The previously published “three‐partial rates” model of Si~1–__x__~Ge~__x__~ layer growth (Kühne 1992) has been extended for describing Si~1–(__x__+__y__)~Ge~__x__~B~__y__~ ternary systems by taking additionally into account a partial rate of boron and a partial rate of boron‐originated