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Segregation and transport coefficients of impurities at the Si/SiO2 interface

โœ Scribed by Sakamoto, K.; Nishi, K.; Ichikawa, F.; Ushio, S.


Book ID
115466615
Publisher
American Institute of Physics
Year
1987
Tongue
English
Weight
524 KB
Volume
61
Category
Article
ISSN
0021-8979

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On the segregation of Ca at SiO2/Si inte
โœ Deenapanray, Prakash N. K.; Petravic, Mladen ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 128 KB

Segregation of Ca in Si has been studied using SIMS and RBS. Pronounced Ca profile broadening is observed during SIMS measurements with oxygen ions under bombardment conditions, yielding the formation of a stoichiometric oxide layer at the surface. Additional profiling through the SiO 2 /Si interfac