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Ab initio study of boron segregation and deactivation at Si/SiO2 interface

✍ Scribed by Young Jun Oh; Jin-Heui Hwang; Hyeon-Kyun Noh; Junhyeok Bang; Byungki Ryu; K.J. Chang

Book ID
113797799
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
605 KB
Volume
89
Category
Article
ISSN
0167-9317

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The previously suggested segregation model for arsenic at Si/SiO 2 interfaces based on a combined trapping/pairing model [J. Dabrowski, H.-J. Müssig, V. Zavodinsky, R. Baierle, M.J. Caldas, Phys. Rev. B 65 ( 2002) 245305] requires high binding energies for interface vacancies, which our results of ∼