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Secondary cluster ions Ge2−and Ge3−for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures

✍ Scribed by M. N. Drozdov; Yu. N. Drozdov; D. N. Lobanov; A. V. Novikov; D. V. Yurasov

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

SIMS depth profiling of Pd/B4C, Ni/C, an

✍ M. N. Drozdov; Yu. N. Drozdov; M. M. Barysheva; V. N. Polkovnikov; N. I. Chkhalo 📂 Article 📅 2011 🏛 Allerton Press Inc 🌐 English ⚖ 285 KB

Use of cluster secondary ions for minimi

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