𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Schottky Barrier Ultraviolet Photodetectors on Epitaxial Lateral Overgrown GaN

✍ Scribed by Monroy, E. ;Calle, F. ;Muñoz, E. ;Beaumont, B. ;Omnès, F. ;Gibart, P.

Book ID
101307970
Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
163 KB
Volume
176
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

GaN-based Schottky barrier ultraviolet p
GaN-based Schottky barrier ultraviolet photodetector with a 5-pair AlGaN-GaN intermediate layer
✍ Lee, Kai Hsuan ;Chang, Ping Chuan ;Chang, Shoou Jinn ;Wu, San Lein 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 344 KB

## Abstract A GaN‐based Schottky barrier diode (SBD) with a 5‐pair AlGaN–GaN intermediate layer for ultraviolet (UV) photodetector (PD) was fabricated and investigated. It was found that we could achieve a smaller dark leakage current and noise level by using the 5‐pair AlGaN–GaN intermediate layer

Dislocations in GaN-Based Laser Diodes o
Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers
✍ Tomiya, S. ;Nakajima, H. ;Funato, K. ;Miyajima, T. ;Kobayashi, K. ;Hino, T. ;Kij 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 134 KB 👁 2 views

a), H. Nakajima (b), K. Funato (b), T. Miyajima (b), K. Kobayashi (b), T. Hino (c), S. Kijima (c), T. Asano (c), and M. Ikeda (c)