GaN-based Schottky barrier ultraviolet photodetector with a 5-pair AlGaN-GaN intermediate layer

✍ Scribed by Lee, Kai Hsuan ;Chang, Ping Chuan ;Chang, Shoou Jinn ;Wu, San Lein

• Book ID: 105366632
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 344 KB
• Volume: 209
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201127545

✦ Synopsis

Abstract

A GaN‐based Schottky barrier diode (SBD) with a 5‐pair AlGaN–GaN intermediate layer for ultraviolet (UV) photodetector (PD) was fabricated and investigated. It was found that we could achieve a smaller dark leakage current and noise level by using the 5‐pair AlGaN–GaN intermediate layer. For our device biased at −5 V, the responsivity at 360 nm was found to be 0.26 A/W and the UV‐to‐visible rejection ratio was estimated to be 1.83 × 10^4^. At the same bias, it was found that minimum noise equivalent power and normalized detectivity of our device were 1.00 × 10^−9^ W and 1.45 × 10^9^ cm Hz^0.5^ W^−1^, respectively. This indicates a simple and effective way to fabricate high‐performance PDs for UV detection.