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GaN-Based Schottky Barrier Photodetectors With a 12-Pair MgN–GaN Buffer Layer

✍ Scribed by Chang, S.J.; Lee, K.H.; Chang, P.C.; Wang, Y.C.; Yu, C.L.; Kuo, C.H.; Wu, S.L.

Book ID
117883427
Publisher
IEEE
Year
2008
Tongue
English
Weight
777 KB
Volume
44
Category
Article
ISSN
0018-9197

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## Abstract A GaN‐based Schottky barrier diode (SBD) with a 5‐pair AlGaN–GaN intermediate layer for ultraviolet (UV) photodetector (PD) was fabricated and investigated. It was found that we could achieve a smaller dark leakage current and noise level by using the 5‐pair AlGaN–GaN intermediate layer