𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Schottky barrier photodetectors based on AlGaN

✍ Scribed by Osinsky, A.; Gangopadhyay, S.; Lim, B. W.; Anwar, M. Z.; Khan, M. A.; Kuksenkov, D. V.; Temkin, H.

Book ID
121722104
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
310 KB
Volume
72
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

GaN-based Schottky barrier ultraviolet p
GaN-based Schottky barrier ultraviolet photodetector with a 5-pair AlGaN-GaN intermediate layer
✍ Lee, Kai Hsuan ;Chang, Ping Chuan ;Chang, Shoou Jinn ;Wu, San Lein πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 344 KB

## Abstract A GaN‐based Schottky barrier diode (SBD) with a 5‐pair AlGaN–GaN intermediate layer for ultraviolet (UV) photodetector (PD) was fabricated and investigated. It was found that we could achieve a smaller dark leakage current and noise level by using the 5‐pair AlGaN–GaN intermediate layer

A -GaO/GaN Schottky-Barrier Photodetecto
A -GaO/GaN Schottky-Barrier Photodetector
✍ Weng, W.Y.; Hsueh, T.J.; Chang, S.J.; Huang, G.J.; Hsueh, H.T. πŸ“‚ Article πŸ“… 2011 πŸ› IEEE 🌐 English βš– 487 KB