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High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes

✍ Scribed by Kang, He; Wang, Quan; Xiao, Hong-Ling; Wang, Cui-Mei; Jiang, Li-Juan; Feng, Chun; Chen, Hong; Yin, Hai-Bo; Wang, Xiao-Liang; Wang, Zhan-Guo; Hou, Xun

Book ID
126047029
Publisher
Institute of Physics
Year
2014
Tongue
English
Weight
605 KB
Volume
31
Category
Article
ISSN
0256-307X

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Simulation and fabrication of high volta
Simulation and fabrication of high voltage AlGaN/GaN based Schottky diodes with field plate edge termination
✍ K. Remashan; Wen-Pin Huang; Jen-Inn Chyi πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 303 KB

In this paper, we report the breakdown voltage (BV) of AlGaN/GaN based Schottky diodes with field plate edge termination. Simulation and fabrication of AlGaN/GaN Schottky diodes were carried out. The simulations were performed using the commercial 2-D device simulator DESSIS. From the simulations, i