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Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

✍ Scribed by Lv, Yuanjie; Lin, Zhaojun; Corrigan, Timothy D.; Zhao, Jianzhi; Cao, Zhifang; Meng, Lingguo; Luan, Chongbiao; Wang, Zhanguo; Chen, Hong

No coin nor oath required. For personal study only.

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