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Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces

โœ Scribed by P.S. Ho; M. Liehr; P.E. Schmid; F.K. Legoues; E.S. Yang; H.L. Evans; X. Wu


Publisher
Elsevier Science
Year
1986
Weight
48 KB
Volume
168
Category
Article
ISSN
0167-2584

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## Characterization of Interface States at Ni/n-Si Schottky Barriers from Z -V Characteristics Experiments were performed on Ni/n-Si(l1 1) Schottky diodes fabricated by the thermal vacuum deposition of nickel on n/n+ Si epitaxial wafer attorr pressure. The non-equilibrium occupation functions of t