a b s t r a c t (1 0 0)-oriented b-FeSi 2 films were epitaxially grown on 3C-SiC-buffered Si(1 0 0) substrates by co-sputtering iron and silicon. The full-width at half maximum of the rocking curve of the b-FeSi 2 800 diffraction peaks was 1.81. The epitaxial relationship between b-FeSi 2 and 3C-Si
Scanning tunnelling microscopy studies of growth morphology in highly epitaxial c-axis oriented Pt thin film on (0 0 1) SrTiO3
β Scribed by X Chen; T Garrent; S.W Liu; Y Lin; Q.Y Zhang; C Dong; C.L Chen
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 333 KB
- Volume
- 542
- Category
- Article
- ISSN
- 0039-6028
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β¦ Synopsis
A noble metal Pt thin film was successfully grown on (0 0 1) SrTiO 3 substrate by using a DC-sputtering technique. The surface morphology and growth features of the as-grown Pt films were investigated by scanning tunnelling microscopy. Growth conditions, such as pre-sputtering, deposition ambience, and oxygen ratio are found to greatly affect the orientation, the crystallinity, and the epitaxial behavior of Pt films on (0 0 1) SrTiO 3 . Single-crystalline Pt films have been achieved by introducing a few percentage oxygen into the sputtering ambient. The in-plane-relationship of the caxis oriented Pt thin films on (0 0 1) SrTiO 3 was determined to be (0 0 1) Pt k(0 0 1) SrTiO 3 and [0 0 1] Pt k[0 0 1] SrTiO 3 . Oxygen in the sputtering ambient was found to be a key factor to achieve the epitaxial Pt films.
π SIMILAR VOLUMES
A highly mismatched Mo/SrTiO 3 system was found to develop two non-equivalent orientation relationships between the metal film and the ceramic substrate. The molybdenum films, with a nominal thickness of 50 nm, were deposited by molecular beam epitaxy at T substrate ΒΌ 600 Β°C. The film and the substr