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Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (0 0 1) using scanning tunneling microscopy

✍ Scribed by Y.P. Chiu; M.C. Shih; B.C. Huang; J.Y. Shen; M.L. Huang; W.C. Lee; P. Chang; T.H. Chiang; M. Hong; J. Kwo

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 581 KB
Volume: 88
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2011.03.042

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Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (0&#xa0;0&#xa0;1) using scanning tunneling microscopy

Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (0 0 1) using scanning tunneling microscopy