β Scribed by P. Muralt; H. Meier; D.W. Pohl; H. Salemink
No coin nor oath required. For personal study only.
In certain problems of electrical transport through condensed matter, it is important to know the potential distribution with nanometer resolution, e.g.. at interfaces (Schottky barriers) or pn junctions. Scanning tunneling potentiometry, a new application of scanning tunneling microscopy, is capable of providing this information. The tunnel current is used for simultaneously sensing probe-to-sample distance and local potential. We have used this technique for the localization of semiconductor junctions in cleaved MBE-grown AIGaAs-GaAs laser structures. Among other applications, the electron injection into the active GaAs layer of a heterostructure laser diode was readily observed.
π SIMILAR VOLUMES
The observation of the motion of an adatom on the reconstructed Ge Ε½ . 111 is a rare event, which will be examined by way of simple adatomαsurface interaction models. Estimations of the residence time of adatoms on energetically favorable sites indicate that a thermal excitation can account for casu