𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Semiconductor interfaces studied by scanning tunneling microscopy and potentiometry

✍ Scribed by P. Muralt

Publisher
Elsevier Science
Year
1987
Weight
58 KB
Volume
181
Category
Article
ISSN
0167-2584

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Scanning tunneling microscopy and potent
Scanning tunneling microscopy and potentiometry at GaAs/AlGaAs heterojunctions
✍ P. Muralt; H. Meier; D.W. Pohl; H. Salemink πŸ“‚ Article πŸ“… 1986 πŸ› Elsevier Science 🌐 English βš– 180 KB

In certain problems of electrical transport through condensed matter, it is important to know the potential distribution with nanometer resolution, e.g.. at interfaces (Schottky barriers) or pn junctions. Scanning tunneling potentiometry, a new application of scanning tunneling microscopy, is capabl

Scanning tunneling microscopy studies du
Scanning tunneling microscopy studies during semiconductor growth
✍ Bert VoigtlΓ€nder πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 682 KB

A scanning tunneling microscope (STM), capable of imaging during semiconductor growth, is described. The method (MBSTM) opens the possibility to follow the growth process of semiconductor molecular beam epitaxy (MBE) during growth. The ability of the microscope to access the evolution of the growth