LBIC and diffusion length mapping applie
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O. Porre; M. Stemmer; M. Pasquinelli
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Article
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1994
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Elsevier Science
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English
β 331 KB
In this work the effect of aluminium treatment on the material and device properties of highly disordered multicrystalline silicon wafers is analysed using the light beam induced current method at different wavelengths. The results show an improvement of the diffusion length L measured on samples su